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  i nchange semiconductor product specification isc website 1 ultrafast recovery rectifier m u r 16 5 0 ct features ultrafast recovery time low forward voltage low leakage current 1 75 operating junction temperature high temperature glass passiva ted junction mechanical characteristics case: epoxy, molded finish: all external sur faces corrosion resistant and terminal leads are readily solderable lead temperature for soldering purposes: 260 max. for 10 seconds applications designed for use in switching power supplies, inverters and as free wheeling diodes. a bsolute maximum ratings (t a =25 ) symbol parameter value unit v rrm v rwm v r peak repetitive reverse voltage working peak reverse voltage dc blocking voltage 5 00 v i f(av) average rectified forward current per leg (rated v r ) total device 8 16 a i f m peak repetitive forward current (rated v r , square wave,20khz) per diode leg 16 a i f sm nonrepetitive peak s urge current (surge applied at rated load conditions half - wave, single phase, 60hz) 1 0 0 a t j junction temperature - 65~ 1 75 t stg storage temperature range - 65~175
i nchange semiconductor product specification isc website 2 ultrafast recovery rectifier mur16 5 0ct thermal characteristics symbol parameter max unit r th j - c thermal r esistance ,ju nction to case 2.0 /w electrical characteristics (t a =25 (pulse test: pulse width=300 s,duty cycle 2%) symbol parameter conditions max unit v f maximum instantaneous forward voltage i f = 8 a 1.68 v i r maximum instantaneous reverse current v rrm = 5 00v 3 t rr maximum reverse recovery time i f = 0.5a, i r = 1a, i rr = 0.25a 60 ns


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